All MOSFET. CED75A3 Datasheet

 

CED75A3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: CED75A3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 10 nC
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 270 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO251

 CED75A3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CED75A3 Datasheet (PDF)

 ..1. Size:367K  cet
 ceu75a3 ced75a3.pdf

CED75A3 CED75A3

CED75A3/CEU75A3N-Channel Enhancement Mode Field Effect TransistorFEATURES25V, 60A, RDS(ON) = 9m @VGS = 10V. RDS(ON) = 13m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM

 ..2. Size:367K  cet
 ced75a3 ceu75a3.pdf

CED75A3 CED75A3

CED75A3/CEU75A3N-Channel Enhancement Mode Field Effect TransistorFEATURES25V, 60A, RDS(ON) = 9m @VGS = 10V. RDS(ON) = 13m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: SQM18N33-160H

 

 
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