CED83A3G Specs and Replacement

Type Designator: CED83A3G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 93 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 510 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm

Package: TO251

CED83A3G substitution

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CED83A3G datasheet

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 ced83a3g ceu83a3g.pdf pdf_icon

CED83A3G

CED83A3G/CEU83A3G N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 93A, RDS(ON) = 4.2m @VGS = 10V. RDS(ON) = 6.2m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAX... See More ⇒

 ..2. Size:393K  cet
 ceu83a3g ced83a3g.pdf pdf_icon

CED83A3G

CED83A3G/CEU83A3G N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 93A, RDS(ON) = 4.2m @VGS = 10V. RDS(ON) = 6.2m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAX... See More ⇒

 7.1. Size:234K  cet
 ceu83a3 ced83a3.pdf pdf_icon

CED83A3G

CED83A3/CEU83A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 80A, RDS(ON) = 6m @VGS = 10V. RDS(ON) = 9m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM R... See More ⇒

 9.1. Size:394K  cet
 ceu830g ced830g.pdf pdf_icon

CED83A3G

CED830G/CEU830G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 500V, 4.5A, RDS(ON) = 1.5 @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES TO-252(D-PAK) TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Tc = 25 ... See More ⇒

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Detailed specifications: CEU93A3, CEUF634, CEUF640, CED73A3G, CED740A, CED75A3, CED830G, CED83A3, IRFP260N, CED840A, CED84A4, CED85A3, CED93A3, CEDF634, CEDF640, CEE02N6A, CEE02N6G

Keywords - CED83A3G MOSFET specs

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