CED85A3 Specs and Replacement

Type Designator: CED85A3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 70 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 330 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: TO251

CED85A3 substitution

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CED85A3 datasheet

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 ceu85a3 ced85a3.pdf pdf_icon

CED85A3

CED85A3/CEU85A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 25V, 80A, RDS(ON) = 6m @VGS = 10V. RDS(ON) = 9m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM R... See More ⇒

Detailed specifications: CED73A3G, CED740A, CED75A3, CED830G, CED83A3, CED83A3G, CED840A, CED84A4, IRF3710, CED93A3, CEDF634, CEDF640, CEE02N6A, CEE02N6G, CEG2288, CEG8205A, CEG8208

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