All MOSFET. CED93A3 Datasheet

 

CED93A3 Datasheet and Replacement


   Type Designator: CED93A3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 57 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 125 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 980 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm
   Package: TO251
 

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CED93A3 Datasheet (PDF)

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CED93A3

CED93A3/CEU93A3N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES30V, 125A, RDS(ON) = 3.2m @VGS = 10V. RDS(ON) = 6.2m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.GDGSCEU SERIESCED SERIESTO-252(D-PAK)TO-251(I-PAK)S

Datasheet: CED740A , CED75A3 , CED830G , CED83A3 , CED83A3G , CED840A , CED84A4 , CED85A3 , 7N65 , CEDF634 , CEDF640 , CEE02N6A , CEE02N6G , CEG2288 , CEG8205A , CEG8208 , CEH2288 .

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