FDD6680A
MOSFET. Datasheet pdf. Equivalent
Type Designator: FDD6680A
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 60
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 56
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 23
nC
trⓘ - Rise Time: 14
nS
Cossⓘ -
Output Capacitance: 500
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0095
Ohm
Package:
TO-252
FDD6680A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDD6680A
Datasheet (PDF)
..1. Size:200K fairchild semi
fdd6680a.pdf 
February 2000FDD6680AN-Channel, Logic Level, PowerTrench MOSFETFeaturesGeneral DescriptionThis N-Channel Logic level MOSFET is produced using 56 A, 30 V. RDS(ON) = 0.0095 @ VGS = 10 VFairchild Semiconductor's advanced PowerTrench process RDS(ON) = 0.0130 @ VGS = 4.5 V.that has been especially tailored to minimize the on-stateresistance and y
..2. Size:287K inchange semiconductor
fdd6680a.pdf
isc N-Channel MOSFET Transistor FDD6680AFEATURESDrain Current : I =56A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =9.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
0.1. Size:327K fairchild semi
fdd6680as.pdf
April 2008FDD6680AS tm30V N-Channel PowerTrench SyncFETGeneral Description Features The FDD6680AS is designed to replace a single 55 A, 30 V RDS(ON) max= 10.5 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC:DC RDS(ON) max= 13.0 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
0.2. Size:287K inchange semiconductor
fdd6680as.pdf
isc N-Channel MOSFET Transistor FDD6680ASFEATURESDrain Current : I =55A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =10.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
7.1. Size:199K fairchild semi
fdd6680.pdf
July 1999FDD6680N-Channel Logic Level PWM Optimized PowerTrench MOSFETFeaturesGeneral DescriptionThis N-Channel Logic level MOSFET has been designed 55 A, 30 V. RDS(on) = 0.010 @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCRDS(on) = 0.015 @ VGS = 4.5 V.converters using either synchronous or conventionalswitching PWM controllers. Optimi
7.2. Size:93K fairchild semi
fdd6680s.pdf
December 2000FDD6680S30V N-Channel PowerTrench SyncFETGeneral Description FeaturesThe FDD6680S is designed to replace a single 55 A, 30 V RDS(ON) = 11 m @ VGS = 10 VMOSFET and Schottky diode in synchronous DC:DCRDS(ON) = 17 m @ VGS = 4.5 Vpower supplies. This 30V MOSFET is designed tomaximize power conversion efficiency, providing a low Inclu
7.3. Size:1488K cn vbsemi
fdd6680.pdf
FDD6680www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.007 at VGS = 10 V 5030 25 nC0.009 at VGS = 4.5 V 40APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D SSTop ViewN-Channel MOSFETABSOLU
7.4. Size:287K inchange semiconductor
fdd6680.pdf
isc N-Channel MOSFET Transistor FDD6680FEATURESDrain Current : I =46A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =10m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr
7.5. Size:287K inchange semiconductor
fdd6680s.pdf
isc N-Channel MOSFET Transistor FDD6680SFEATURESDrain Current : I =55A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =11m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
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