CEH8205 Specs and Replacement
Type Designator: CEH8205
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 5.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3.8 nS
Cossⓘ - Output Capacitance: 125 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: TSOP6
CEH8205 substitution
- MOSFET ⓘ Cross-Reference Search
CEH8205 datasheet
ceh8205.pdf
CEH8205 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 5.2A , RDS(ON) TYP = 25 m @VGS = 4.5V. RDS(ON) TYP = 30m @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. D2(5) D1(2) TSOP-6 package. Halogen free. 4 5 6 G1(6) G2(4) 3 2 1 S1(1) S2(3) TSOP-6 ABSOLUTE MAXIMUM RATINGS TA = 25 C unles... See More ⇒
Detailed specifications: CEM3120, CEA3252, CEB10N65, CEB12N65, CEC8218, CEF05N6, CEF10N65, CEF12N65, TK10A60D, CEM2539, CEM73A3G, CEZ3R03, CEM7808, CEP10N65, CEP12N65, CES2336, CEM3128
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
