All MOSFET. CEH8205 Datasheet

 

CEH8205 Datasheet and Replacement


   Type Designator: CEH8205
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 5.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.8 nS
   Cossⓘ - Output Capacitance: 125 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: TSOP6
 

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CEH8205 Datasheet (PDF)

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CEH8205

CEH8205N-Channel Enhancement Mode Field Effect TransistorFEATURES20V, 5.2A , RDS(ON) TYP = 25 m @VGS = 4.5V. RDS(ON) TYP = 30m @VGS = 2.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.Lead free product is acquired.D2(5)D1(2)TSOP-6 package.Halogen free.456G1(6) G2(4)321 S1(1) S2(3)TSOP-6ABSOLUTE MAXIMUM RATINGS TA = 25 C unles

Datasheet: CEM3120 , CEA3252 , CEB10N65 , CEB12N65 , CEC8218 , CEF05N6 , CEF10N65 , CEF12N65 , TK10A60D , CEM2539 , CEM73A3G , CEZ3R03 , CEM7808 , CEP10N65 , CEP12N65 , CES2336 , CEM3128 .

History: SQJ964EP | SRM7N60 | AOI294A | AOE6932 | AONS21357 | NP80N03DDE | AONS21307

Keywords - CEH8205 MOSFET datasheet

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