All MOSFET. CEH8205 Datasheet

 

CEH8205 MOSFET. Datasheet pdf. Equivalent


   Type Designator: CEH8205
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 5.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 8.2 nC
   trⓘ - Rise Time: 3.8 nS
   Cossⓘ - Output Capacitance: 125 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: TSOP6

 CEH8205 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CEH8205 Datasheet (PDF)

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 ceh8205.pdf

CEH8205 CEH8205

CEH8205N-Channel Enhancement Mode Field Effect TransistorFEATURES20V, 5.2A , RDS(ON) TYP = 25 m @VGS = 4.5V. RDS(ON) TYP = 30m @VGS = 2.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.Lead free product is acquired.D2(5)D1(2)TSOP-6 package.Halogen free.456G1(6) G2(4)321 S1(1) S2(3)TSOP-6ABSOLUTE MAXIMUM RATINGS TA = 25 C unles

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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