CEM73A3G Datasheet and Replacement
Type Designator: CEM73A3G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 265 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: SO8
CEM73A3G substitution
CEM73A3G Datasheet (PDF)
cem73a3g.pdf

CEM73A3GN-Channel Enhancement Mode Field Effect TransistorFEATURES530V, 12.5A, RDS(ON) = 11m @VGS = 10V. RDS(ON) = 18m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless oth
cem7350l.pdf

CEM7350LDual Enhancement Mode Field Effect Transistor (N and P Channel)FEATURES 100V, 2.6A, RDS(ON) = 190m @VGS = 5V. RDS(ON) = 180m @VGS = 10V.-100V, -2.0A, RDS(ON) = 320m @VGS = -10V.Super high dense cell design for extremely low RDS(ON).D1 D1 D2 D2High power and current handing capability.8 7 6 5Lead-free plating ; RoHS compliant.Surface mount Package.SO-81
cem7350.pdf

CEM7350Dual Enhancement Mode Field Effect Transistor (N and P Channel)FEATURES 100V, 2.6A, RDS(ON) = 190m @VGS = 10V.-100V, -2.0A, RDS(ON) = 320m @VGS = -10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D1 D1 D2 D2Lead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S1 G1 S2 G2ABSOLUTE MAX
Datasheet: CEB10N65 , CEB12N65 , CEC8218 , CEF05N6 , CEF10N65 , CEF12N65 , CEH8205 , CEM2539 , 18N50 , CEZ3R03 , CEM7808 , CEP10N65 , CEP12N65 , CES2336 , CEM3128 , CEM3138 , CEM3172 .
History: VS4618AP
Keywords - CEM73A3G MOSFET datasheet
CEM73A3G cross reference
CEM73A3G equivalent finder
CEM73A3G lookup
CEM73A3G substitution
CEM73A3G replacement
History: VS4618AP



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