FDG313N
MOSFET. Datasheet pdf. Equivalent
Type Designator: FDG313N
Marking Code: .13
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.75
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5
V
|Id|ⓘ - Maximum Drain Current: 0.95
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 1.64
nC
trⓘ - Rise Time: 8.5
nS
Cossⓘ -
Output Capacitance: 28
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.45
Ohm
Package:
SC70-6
FDG313N
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDG313N
Datasheet (PDF)
..1. Size:80K fairchild semi
fdg313n d87z.pdf 
July 2000FDG313NDigital FET, N-ChannelGeneral Description FeaturesThis N-Channel enhancement mode field effect 0.95 A, 25 V. RDS(on) = 0.45 @ VGS = 4.5 Vtransistor is produced using Fairchild's proprietary, highRDS(on) = 0.60 @ VGS = 2.7 V.cell density, DMOS technology. This very high densityprocess is especially tailored to minimize on-stateresistance. This devic
..2. Size:82K fairchild semi
fdg313n.pdf
July 2000FDG313NDigital FET, N-ChannelGeneral Description FeaturesThis N-Channel enhancement mode field effect 0.95 A, 25 V. RDS(on) = 0.45 @ VGS = 4.5 Vtransistor is produced using Fairchild's proprietary, highRDS(on) = 0.60 @ VGS = 2.7 V.cell density, DMOS technology. This very high densityprocess is especially tailored to minimize on-stateresistance. This devic
9.1. Size:81K fairchild semi
fdg315n.pdf
July 2000FDG315NN-Channel Logic Level PowerTrench MOSFETGeneral Description FeaturesThis N-Channel Logic Level MOSFET is produced using 2 A, 30 V. RDS(ON) = 0.12 @ VGS = 10 VFairchild Semiconductor's advanced PowerTrench RDS(ON) = 0.16 @ VGS = 4.5 V.process that has been especially tailored to minimizeon-state resistance and yet maintain super
9.2. Size:89K fairchild semi
fdg311n.pdf
February 2000FDG311NN-Channel 2.5V Specified PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET is produced using Fairchild 1.9 A, 20 V. RDS(ON) = 0.115 @ VGS = 4.5 VSemiconductor's advanced PowerTrench process thatRDS(ON) = 0.150 @ VGS = 2.5 V.has been especially tailored to minimize the on-stateresistance and yet maintain lo
9.3. Size:79K fairchild semi
fdg312p.pdf
February 1999FDG312PP-Channel 2.5V Specified PowerTrench MOSFETGeneral DescriptionFeaturesThis P-Channel MOSFET is produced using Fairchild -1.2 A, -20 V. RDS(on) = 0.18 @ VGS = -4.5 VSemiconductor's advanced PowerTrench process thatRDS(on) = 0.25 @ VGS = -2.5 V.has been especially tailored to minimize the on-stateresistance and yet maintain low gate charge for
9.4. Size:70K fairchild semi
fdg316p.pdf
December 2001FDG316PP-Channel Logic Level PowerTrench MOSFETGeneral Description FeaturesThis P-Channel Logic Level MOSFET is produced using -1.6 A, -30 V. RDS(ON) = 0.19 @ VGS = -10 VFairchild Semiconductor's advanced PowerTrenchRDS(ON) = 0.30 @ VGS = -4.5 V.process that has been especially tailored to minimizeon-state resistance and yet maint
9.5. Size:84K fairchild semi
fdg314p.pdf
July 2000FDG314PDigital FET, P-ChannelGeneral Description FeaturesThis P-Channel enhancement mode field effect -0.65 A, -25 V. RDS(ON) = 1.1 @ VGS = -4.5 Vtransistor is produced using Fairchild SemiconductorsRDS(ON) = 1.5 @ VGS = -2.7 V.proprietary, high cell density, DMOS technology. Thisvery high density process is tailored to minimize on-state resistance at
9.6. Size:201K onsemi
fdg311n.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
9.7. Size:185K onsemi
fdg316p.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
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