CEM6186 Specs and Replacement
Type Designator: CEM6186
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 125 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
Package: SO8
CEM6186 substitution
- MOSFET ⓘ Cross-Reference Search
CEM6186 datasheet
cem6186.pdf
CEM6186 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 8A, RDS(ON) = 26m @VGS = 10V. RDS(ON) = 40m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unle... See More ⇒
cem6188.pdf
CEM6188 PRELIMINARY Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 7.3A, RDS(ON) = 26m @VGS = 10V. RDS(ON) = 35m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D1 D1 D2 D2 Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 S1 G1 S2 G2 1 ABSOLUTE MAXIMUM RATINGS ... See More ⇒
Detailed specifications: CEM4279, CEM4282, CEM4308, CEM6056, CEM6086, CEM6086L, CEM6088, CEM6088L, IRF830, CEM6188, CEM6426, CEM6428, CEM6600, CEM6608, CEM6659, CEM7350, CEM7350L
Keywords - CEM6186 MOSFET specs
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