All MOSFET. CEM6186 Datasheet

 

CEM6186 Datasheet and Replacement


   Type Designator: CEM6186
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 125 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
   Package: SO8
 

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CEM6186 Datasheet (PDF)

 ..1. Size:402K  cet
 cem6186.pdf pdf_icon

CEM6186

CEM6186PRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 8A, RDS(ON) = 26m @VGS = 10V. RDS(ON) = 40m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unle

 8.1. Size:408K  cet
 cem6188.pdf pdf_icon

CEM6186

CEM6188PRELIMINARYDual N-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 7.3A, RDS(ON) = 26m @VGS = 10V. RDS(ON) = 35m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D1 D1 D2 D2Lead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 4S1 G1 S2 G21ABSOLUTE MAXIMUM RATINGS

Datasheet: CEM4279 , CEM4282 , CEM4308 , CEM6056 , CEM6086 , CEM6086L , CEM6088 , CEM6088L , IRF1405 , CEM6188 , CEM6426 , CEM6428 , CEM6600 , CEM6608 , CEM6659 , CEM7350 , CEM7350L .

History: APT3580BN | RSR030N06

Keywords - CEM6186 MOSFET datasheet

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