CEM6188 MOSFET. Datasheet pdf. Equivalent
Type Designator: CEM6188
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 7.3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 24 nC
trⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 125 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
Package: SO8
CEM6188 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CEM6188 Datasheet (PDF)
cem6188.pdf
CEM6188PRELIMINARYDual N-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 7.3A, RDS(ON) = 26m @VGS = 10V. RDS(ON) = 35m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D1 D1 D2 D2Lead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 4S1 G1 S2 G21ABSOLUTE MAXIMUM RATINGS
cem6186.pdf
CEM6186PRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 8A, RDS(ON) = 26m @VGS = 10V. RDS(ON) = 40m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unle
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: 2SJ264
History: 2SJ264
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