CEM6608 Specs and Replacement

Type Designator: CEM6608

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.5 nS

Cossⓘ - Output Capacitance: 123 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.076 Ohm

Package: SO8

CEM6608 substitution

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CEM6608 datasheet

 ..1. Size:641K  cet
cem6608.pdf pdf_icon

CEM6608

CEM6608 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 4A, RDS(ON) = 76m @VGS = 10V. RDS(ON) = 100m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D1 D1 D2 D2 Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unles... See More ⇒

 8.1. Size:651K  cet
cem6600.pdf pdf_icon

CEM6608

CEM6600 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 4A, RDS(ON) = 76m @VGS = 10V. RDS(ON) = 100m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise... See More ⇒

 8.2. Size:424K  cet
cem6601.pdf pdf_icon

CEM6608

CEM6601 P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -4A, RDS(ON) = 86m @VGS = -10V. RDS(ON) = 125m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless other... See More ⇒

 8.3. Size:425K  cet
cem6607.pdf pdf_icon

CEM6608

CEM6607 Dual P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -60V, -3.8A, RDS(ON) = 86m @VGS = -10V. RDS(ON) = 125m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D1 D1 D2 D2 Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATI... See More ⇒

Detailed specifications: CEM6086L, CEM6088, CEM6088L, CEM6186, CEM6188, CEM6426, CEM6428, CEM6600, K2611, CEM6659, CEM7350, CEM7350L, CEM8208, CEM8809, CEM8958, CEM8958A, CEM8968

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