CEM8958 Specs and Replacement
Type Designator: CEM8958
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7(5.2) A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4(5) nS
Cossⓘ - Output Capacitance: 145(155) pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: SO8
CEM8958 substitution
- MOSFET ⓘ Cross-Reference Search
CEM8958 datasheet
cem8958.pdf
CEM8958 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 5 30V, 7A, RDS(ON) = 28m @VGS = 10V. RDS(ON) = 40m @VGS = 4.5V. -30V, -5.2A, RDS(ON) = 52m @VGS = -10V. RDS(ON) = 80m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). D1 D1 D2 D2 High power and current handing capability. 8 7 6 5 Lead free product is acquired. Surface... See More ⇒
cem8958a.pdf
CEM8958A Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRELIMINARY FEATURES 5 30V, 6.8A, RDS(ON) = 28m @VGS = 10V. RDS(ON) = 42m @VGS = 4.5V. -30V, -4.8A, RDS(ON) = 58m @VGS = -10V. RDS(ON) = 85m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). D1 D1 D2 D2 8 7 6 5 High power and current handing capability. Lead free product is acq... See More ⇒
cem8968.pdf
CEM8968 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 5 30V, 7A, RDS(ON) = 28m @VGS = 10V. RDS(ON) = 40m @VGS = 4.5V. -30V, -6.2A, RDS(ON) = 33m @VGS = -10V. RDS(ON) = 52m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). D1 D1 D2 D2 8 7 6 5 High power and current handing capability. Lead free product is acquired. Surface ... See More ⇒
Detailed specifications: CEM6428, CEM6600, CEM6608, CEM6659, CEM7350, CEM7350L, CEM8208, CEM8809, 60N06, CEM8958A, CEM8968, CEM9436A, CEM9926A, CEM9935A, CEM9936A, CEN7002A, CES2302
Keywords - CEM8958 MOSFET specs
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