CEM8958 Datasheet and Replacement
Type Designator: CEM8958
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7(5.2) A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 4(5) nS
Cossⓘ - Output Capacitance: 145(155) pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: SO8
CEM8958 substitution
CEM8958 Datasheet (PDF)
cem8958.pdf

CEM8958Dual Enhancement Mode Field Effect Transistor (N and P Channel)FEATURES530V, 7A, RDS(ON) = 28m @VGS = 10V. RDS(ON) = 40m @VGS = 4.5V.-30V, -5.2A, RDS(ON) = 52m @VGS = -10V. RDS(ON) = 80m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).D1 D1 D2 D2High power and current handing capability.8 7 6 5Lead free product is acquired.Surface
cem8958a.pdf

CEM8958ADual Enhancement Mode Field Effect Transistor (N and P Channel)PRELIMINARYFEATURES530V, 6.8A, RDS(ON) = 28m @VGS = 10V. RDS(ON) = 42m @VGS = 4.5V.-30V, -4.8A, RDS(ON) = 58m @VGS = -10V. RDS(ON) = 85m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON). D1 D1 D2 D28 7 6 5High power and current handing capability.Lead free product is acq
cem8968.pdf

CEM8968Dual Enhancement Mode Field Effect Transistor (N and P Channel)FEATURES530V, 7A, RDS(ON) = 28m @VGS = 10V. RDS(ON) = 40m @VGS = 4.5V.-30V, -6.2A, RDS(ON) = 33m @VGS = -10V. RDS(ON) = 52m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON). D1 D1 D2 D28 7 6 5High power and current handing capability.Lead free product is acquired.Surface
Datasheet: CEM6428 , CEM6600 , CEM6608 , CEM6659 , CEM7350 , CEM7350L , CEM8208 , CEM8809 , AO4468 , CEM8958A , CEM8968 , CEM9436A , CEM9926A , CEM9935A , CEM9936A , CEN7002A , CES2302 .
History: IRF3007PBF
Keywords - CEM8958 MOSFET datasheet
CEM8958 cross reference
CEM8958 equivalent finder
CEM8958 lookup
CEM8958 substitution
CEM8958 replacement
History: IRF3007PBF



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