2N6849L Datasheet and Replacement
Type Designator: 2N6849L
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: TO39
2N6849L substitution
2N6849L Datasheet (PDF)
2n6849 irff9130.pdf

PD - 90550DIRFF9130 JANTX2N6849REPETITIVE AVALANCHE AND dv/dt RATED JANTXV2N6849HEXFETTRANSISTORS JANS2N6849THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/564100V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRFF9130 -100V 0.30 -6.5AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry an
2n6849hp.pdf

P-CHANNEL POWER MOSFET 2N6849HP MOSFET Transistor In A Hermetic Metal TO-205AD Package Single Pulse Avalanche Energy Rated Designed For Switching, Power Supply, Motor Control and Amplifier Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VDS Drain Source Voltage -100V VDG RGS = 20K Drain Gat
2n6849u.pdf

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com P-CHANNEL MOSFET Qualified per MIL-PRF-19500/564 DEVICES LEVELS JAN 2N6849 2N6849UJANTX JANTXV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Drain Source
Datasheet: 2N6802JANTX , 2N6802JANTXV , 2N6802SM , 2N6823 , 2N6826 , 2N6845 , 2N6847 , 2N6849 , RU6888R , 2N6851 , 2N6901 , 2N6901JANTX , 2N6901JANTXV , 2N6902 , 2N6902JANTX , 2N6902JANTXV , 2N6903 .
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