CEM9926A Specs and Replacement

Type Designator: CEM9926A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 130 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm

Package: SO8

CEM9926A substitution

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CEM9926A datasheet

 ..1. Size:409K  cet
cem9926a.pdf pdf_icon

CEM9926A

CEM9926A Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 6A, RDS(ON) = 27m @VGS = 4.5V. RDS(ON) = 40m @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D1 D1 D2 D2 Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unl... See More ⇒

 7.1. Size:843K  cn vbsemi
cem9926.pdf pdf_icon

CEM9926A

CEM9926 www.VBsemi.tw Dual N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.025 at VGS = 4.5 V 7.1 TrenchFET Power MOSFET 20 0.035 at VGS = 2.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC SO-8 D1 D2 S1 1 D1 8 G1 2 D1 7 S2 3 D2 6 G1 G2 G2 4 D2 ... See More ⇒

 9.1. Size:141K  cet
cem9953a.pdf pdf_icon

CEM9926A

CEM9953A Dual P-Channel Enhancement Mode Field Effect Transistor FEATURES 5 -30V, -3.5A, RDS(ON) = 80m @VGS = -10V. RDS(ON) = 130m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D1 D1 D2 D2 Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA =... See More ⇒

 9.2. Size:139K  cet
cem9936a.pdf pdf_icon

CEM9926A

CEM9936A Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 30V, 5.4A, RDS(ON) = 40m @VGS = 10V. RDS(ON) = 55m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D1 D1 D2 D2 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C ... See More ⇒

Detailed specifications: CEM7350, CEM7350L, CEM8208, CEM8809, CEM8958, CEM8958A, CEM8968, CEM9436A, IRFZ44N, CEM9935A, CEM9936A, CEN7002A, CES2302, CES2306, CES2308, CES2310, CES2312

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