CEN7002A Datasheet and Replacement
Type Designator: CEN7002A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 6.5 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: SOT23T
CEN7002A substitution
CEN7002A Datasheet (PDF)
cen7002a.pdf

CEN7002AN-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 0.25A, RDS(ON) = 3 @VGS = 10V. RDS(ON) = 4 @VGS = 4.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.DLead free product is acquired.SOT-23-T package.CEN7002AGSOT-23-TDSGDie upside up SOT-23-TSpackage.ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Datasheet: CEM8809 , CEM8958 , CEM8958A , CEM8968 , CEM9436A , CEM9926A , CEM9935A , CEM9936A , IRF840 , CES2302 , CES2306 , CES2308 , CES2310 , CES2312 , CES2314 , CES2316 , CES2320 .
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