All MOSFET. CET6426 Datasheet

 

CET6426 Datasheet and Replacement


   Type Designator: CET6426
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 13 nC
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: SOT223
 

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CET6426 Datasheet (PDF)

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CET6426

CET6426N-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 5A, RDS(ON) = 75m @VGS = 10V. RDS(ON) = 100m @VGS = 4.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.DLead free product is acquired.SOT-223 package.GDSDGSOT-223SABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Source

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