CEB12P10 Specs and Replacement
Type Designator: CEB12P10
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 140 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.315 Ohm
Package: TO263
CEB12P10 substitution
- MOSFET ⓘ Cross-Reference Search
CEB12P10 datasheet
cep12p10 ceb12p10.pdf
CEP12P10/CEB12P10 P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -11A, RDS(ON) =315m @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted... See More ⇒
cep12n6 ceb12n6 cef12n6.pdf
CEP12N6/CEB12N6 CEF12N6 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP12N6 600V 0.65 12A 10V CEB12N6 600V 0.65 12A 10V CEF12N6 600V 0.65 12A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES ... See More ⇒
cep12n5 ceb12n5 cef12n5.pdf
CEP12N5/CEB12N5 CEF12N5 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP12N5 500V 0.54 12A 10V CEB12N5 500V 0.54 12A 10V CEF12N5 500V 0.54 12A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES ... See More ⇒
cep12n65 ceb12n65 cef12n65.pdf
CEP12N65/CEB12N65 CEF12N65 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP12N65 650V 0.73 12A 10V CEB12N65 650V 0.73 12A 10V CEF12N65 650V 0.73 12A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES C... See More ⇒
Detailed specifications: CET3055L, CET3252, CET6426, CEU4269, CEU4279, CEV2306, CEA6861, CEB05P03, 7N65, CEB14P20, CEB15P15, CEB20P06, CEB20P10, CEB30P03, CEB35P10, CEB50P03, CEB6601
Keywords - CEB12P10 MOSFET specs
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