CEB15P15 Datasheet and Replacement
Type Designator: CEB15P15
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 96 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 175 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
Package: TO263
CEB15P15 substitution
CEB15P15 Datasheet (PDF)
cef15p15 cep15p15 ceb15p15.pdf

CEP15P15/CEB15P15CEF15P15PRELIMINARYP-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP15P15 -150V 0.24 -15A -10VCEB15P15 -150V 0.24 -15A -10VCEF15P15 -150V 0.24 -15A d -10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GSCEB SERIESCEP
cep15a03 ceb15a03.pdf

CEP15A03/CEB15A03N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES30V, 190A, RDS(ON) = 4.5m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless other
Datasheet: CET6426 , CEU4269 , CEU4279 , CEV2306 , CEA6861 , CEB05P03 , CEB12P10 , CEB14P20 , 7N65 , CEB20P06 , CEB20P10 , CEB30P03 , CEB35P10 , CEB50P03 , CEB6601 , CEB95P04 , CED05P03 .
History: NTMFD030N06C | SPP03N60C3 | NTK3142PT1G | CJQ4406 | TSM2312CX | 2N7002NXBK | IRF7902PBF
Keywords - CEB15P15 MOSFET datasheet
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History: NTMFD030N06C | SPP03N60C3 | NTK3142PT1G | CJQ4406 | TSM2312CX | 2N7002NXBK | IRF7902PBF



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