All MOSFET. CEB15P15 Datasheet

 

CEB15P15 Datasheet and Replacement


   Type Designator: CEB15P15
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 175 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
   Package: TO263
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CEB15P15 Datasheet (PDF)

 ..1. Size:349K  cet
 cef15p15 cep15p15 ceb15p15.pdf pdf_icon

CEB15P15

CEP15P15/CEB15P15CEF15P15PRELIMINARYP-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP15P15 -150V 0.24 -15A -10VCEB15P15 -150V 0.24 -15A -10VCEF15P15 -150V 0.24 -15A d -10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GSCEB SERIESCEP

 9.1. Size:395K  cet
 cep15a03 ceb15a03.pdf pdf_icon

CEB15P15

CEP15A03/CEB15A03N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES30V, 190A, RDS(ON) = 4.5m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless other

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: HM4441A | BRCS200P03DP | SLF13N50A | IRFH5250D | APT40M70LVR | TSM4424CS | LKK47-06C5

Keywords - CEB15P15 MOSFET datasheet

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