All MOSFET. CEB15P15 Datasheet

 

CEB15P15 Datasheet and Replacement


   Type Designator: CEB15P15
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 175 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
   Package: TO263
 

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CEB15P15 Datasheet (PDF)

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 cef15p15 cep15p15 ceb15p15.pdf pdf_icon

CEB15P15

CEP15P15/CEB15P15CEF15P15PRELIMINARYP-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP15P15 -150V 0.24 -15A -10VCEB15P15 -150V 0.24 -15A -10VCEF15P15 -150V 0.24 -15A d -10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GSCEB SERIESCEP

 9.1. Size:395K  cet
 cep15a03 ceb15a03.pdf pdf_icon

CEB15P15

CEP15A03/CEB15A03N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES30V, 190A, RDS(ON) = 4.5m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless other

Datasheet: CET6426 , CEU4269 , CEU4279 , CEV2306 , CEA6861 , CEB05P03 , CEB12P10 , CEB14P20 , IRF9540 , CEB20P06 , CEB20P10 , CEB30P03 , CEB35P10 , CEB50P03 , CEB6601 , CEB95P04 , CED05P03 .

History: FXN12N65F | OSG65R650F | IRF5210LPBF | HSP0018A | FQB9N50C | OSG65R760DF | IPP060N06N

Keywords - CEB15P15 MOSFET datasheet

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