CEB20P10 MOSFET. Datasheet pdf. Equivalent
Type Designator: CEB20P10
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 115 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 20 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 30 nC
Rise Time (tr): 16 nS
Drain-Source Capacitance (Cd): 210 pF
Maximum Drain-Source On-State Resistance (Rds): 0.13 Ohm
Package: TO263
CEB20P10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CEB20P10 Datasheet (PDF)
cep20p10 ceb20p10.pdf
CEP20P10/CEB20P10P-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES-100V, -20A, RDS(ON) =130m @VGS = -10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead-free plating ; RoHS compliant.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unles
cep20p06 ceb20p06.pdf
CEP20P06/CEB20P06P-Channel Enhancement Mode Field Effect TransistorFEATURES-60V, -14A, RDS(ON) =125m @VGS = -10V.RDS(ON) =175m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS T
cep20a03 ceb20a03.pdf
CEP20A03/CEB20A03N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES30V, 197A, RDS(ON) = 2 m @VGS = 10V. RDS(ON) = 3 m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead-free plating ; RoHS compliant.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK)TO-220SABSOLUTE
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP450 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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