FDG6303N PDF and Equivalents Search

 

FDG6303N Specs and Replacement


   Type Designator: FDG6303N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 0.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 8.5 nS
   Cossⓘ - Output Capacitance: 28 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
   Package: SC70-6
 

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FDG6303N datasheet

 ..1. Size:414K  fairchild semi
fdg6303n.pdf pdf_icon

FDG6303N

September 2001 FDG6303N Dual N-Channel, Digital FET General Description Features 25 V, 0.50 A continuous, 1.5 A peak. These dual N-Channel logic level enhancement mode RDS(ON) = 0.45 @ VGS= 4.5 V, field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This RDS(ON) =0.60 @ VGS= 2.7 V. very high density process is especially ta... See More ⇒

 ..2. Size:493K  onsemi
fdg6303n.pdf pdf_icon

FDG6303N

FDG6303N Dual N-Channel, Digital FET General Description Features 25 V, 0.50 A continuous, 1.5 A peak. These dual N-Channel logic level enhancement mode RDS(ON) = 0.45 @ VGS= 4.5 V, field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS RDS(ON) =0.60 @ VGS= 2.7 V. technology. This very high density process is Very low level gate... See More ⇒

 ..3. Size:801K  cn vbsemi
fdg6303n.pdf pdf_icon

FDG6303N

FDG6303N www.VBsemi.tw Dual N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition TrenchFET Power MOSFET 0.086 at VGS = 4.5 V 2.6a 100 % Rg Tested 20 0.110 at VGS = 2.5 V 2.5a 5.0 nC Typical ESD Protection 2100 V HBM a 0.180 at VGS = 1.8 V 2.3 Compliant to RoHS Directive... See More ⇒

 8.1. Size:346K  fairchild semi
fdg6301n f085.pdf pdf_icon

FDG6303N

March 2009 FDG6301N_F085 Dual N-Channel, Digital FET General Description Features 25 V, 0.22 A continuous, 0.65 A peak. These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's RDS(ON) = 4 @ VGS= 4.5 V, proprietary, high cell density, DMOS technology. This RDS(ON) = 5 @ VGS= 2.7 V. very high density process is especially tailor... See More ⇒

Detailed specifications: FDG311N , FDG312P , FDG313N , FDG314P , FDG315N , FDG316P , FDG6301N , FDG6302P , IRFZ48N , FDG6304P , FDN335N , FDN336P , FDN337N , FDN338P , FDN339AN , FDN340P , FDN357N .

Keywords - FDG6303N MOSFET specs

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