CED05P03
MOSFET. Datasheet pdf. Equivalent
Type Designator: CED05P03
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 42
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 15
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 22.5
nC
trⓘ - Rise Time: 11
nS
Cossⓘ -
Output Capacitance: 420
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.07
Ohm
Package:
TO251
CED05P03
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CED05P03
Datasheet (PDF)
..1. Size:365K cet
ced05p03 ceu05p03.pdf
CED05P03/CEU05P03P-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -15A, RDS(ON) = 70m @VGS = -10V. RDS(ON) = 120m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE
9.1. Size:363K cet
ced05n8.pdf
CED05N8/CEU05N8N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES800V, 3.4A, RDS(ON) = 2.9 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead-free plating ; RoHS compliant.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc
9.2. Size:415K cet
ceu05n65 ced05n65.pdf
CED05N65/CEU05N65N-Channel Enhancement Mode Field Effect TransistorFEATURES650V, 4A, RDS(ON) = 2.4 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead-free plating ; RoHS compliant.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless
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