All MOSFET. CED12P10 Datasheet

 

CED12P10 Datasheet and Replacement


   Type Designator: CED12P10
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 13 nC
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.315 Ohm
   Package: TO251
 

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CED12P10 Datasheet (PDF)

 ..1. Size:252K  cet
 ced12p10 ceu12p10.pdf pdf_icon

CED12P10

CED12P10/CEU12P10P-Channel Enhancement Mode Field Effect TransistorFEATURES-100V, -9A, RDS(ON) = 315m @VGS = -10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.DTO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless

 9.1. Size:410K  cet
 ceu12n10 ced12n10.pdf pdf_icon

CED12P10

CED12N10/CEU12N10N-Channel Enhancement Mode Field Effect TransistorFEATURES100V, 11A, RDS(ON) = 180m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.GDGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless o

 9.2. Size:411K  cet
 ced12n10 ceu12n10.pdf pdf_icon

CED12P10

CED12N10/CEU12N10N-Channel Enhancement Mode Field Effect TransistorFEATURES100V, 11A, RDS(ON) = 180m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.GDGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless o

 9.3. Size:571K  cet
 ceu12n10l ced12n10l.pdf pdf_icon

CED12P10

CED12N10L/CEU12N10LN-Channel Enhancement Mode Field Effect TransistorFEATURES100V, 11A, RDS(ON) = 175m @VGS = 10V. RDS(ON) = 185m @VGS = 5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability. DLead free product is acquired.TO-251 & TO-252 package.GDGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MA

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History: FDME1034CZT

Keywords - CED12P10 MOSFET datasheet

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