CED12P10 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: CED12P10
Тип транзистора: MOSFET
Полярность: P
Pd ⓘ - Максимальная рассеиваемая мощность: 50 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 9 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 7 ns
Cossⓘ - Выходная емкость: 115 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.315 Ohm
Тип корпуса: TO251
Аналог (замена) для CED12P10
CED12P10 Datasheet (PDF)
ced12p10 ceu12p10.pdf

CED12P10/CEU12P10P-Channel Enhancement Mode Field Effect TransistorFEATURES-100V, -9A, RDS(ON) = 315m @VGS = -10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.DTO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless
ceu12n10 ced12n10.pdf

CED12N10/CEU12N10N-Channel Enhancement Mode Field Effect TransistorFEATURES100V, 11A, RDS(ON) = 180m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.GDGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless o
ced12n10 ceu12n10.pdf

CED12N10/CEU12N10N-Channel Enhancement Mode Field Effect TransistorFEATURES100V, 11A, RDS(ON) = 180m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.GDGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless o
ceu12n10l ced12n10l.pdf

CED12N10L/CEU12N10LN-Channel Enhancement Mode Field Effect TransistorFEATURES100V, 11A, RDS(ON) = 175m @VGS = 10V. RDS(ON) = 185m @VGS = 5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability. DLead free product is acquired.TO-251 & TO-252 package.GDGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MA
Другие MOSFET... CEB20P10 , CEB30P03 , CEB35P10 , CEB50P03 , CEB6601 , CEB95P04 , CED05P03 , CED11P20 , SPP20N60C3 , CED20P06 , CED20P10 , CED2303 , CED30P10 , CED3301 , CED3423 , CED4201 , CED4301 .
History: SRM4N65D1 | BLS70R900-D | 40604 | P1520ED | CEP740G | 2P986V | CEM4435A
History: SRM4N65D1 | BLS70R900-D | 40604 | P1520ED | CEP740G | 2P986V | CEM4435A



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