All MOSFET. CED4311 Datasheet

 

CED4311 Datasheet and Replacement


   Type Designator: CED4311
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 33 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 19 nC
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 285 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: TO251
 

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CED4311 Datasheet (PDF)

 ..1. Size:401K  cet
 ced4311 ceu4311.pdf pdf_icon

CED4311

CED4311/CEU4311P-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -33A, RDS(ON) = 18m @VGS = -10V. RDS(ON) = 30m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAX

 9.1. Size:409K  cet
 ced4301 ceu4301.pdf pdf_icon

CED4311

CED4301/CEU4301P-Channel Enhancement Mode Field Effect TransistorFEATURES-40V, -20A, RDS(ON) = 42m @VGS = -10V. RDS(ON) = 65m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAX

Datasheet: CED20P06 , CED20P10 , CED2303 , CED30P10 , CED3301 , CED3423 , CED4201 , CED4301 , 4435 , CED6601 , CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 .

History: CED6601 | FDY1002PZ | FRK254D | RU6H5L

Keywords - CED4311 MOSFET datasheet

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