All MOSFET. CEH2313 Datasheet

 

CEH2313 Datasheet and Replacement


   Type Designator: CEH2313
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: TSOP6
 

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CEH2313 Datasheet (PDF)

 ..1. Size:340K  cet
 ceh2313.pdf pdf_icon

CEH2313

CEH2313P-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -4.6A, RDS(ON) = 60m @VGS = -10V. RDS(ON) = 90m @VGS = -4.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.D(1,2,5,6,)Lead free product is acquired.TSOP-6 package.456G(3)321S(4)TSOP-6ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol

 8.1. Size:164K  cet
 ceh2316.pdf pdf_icon

CEH2313

CEH2316N-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 6A , RDS(ON) = 34m @VGS = 10V. RDS(ON) = 50m @VGS = 4.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.D(1,2,5,6,)Lead free product is acquired.TSOP-6 package.456G(3)321S(4)TSOP-6ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit

 8.2. Size:1163K  cet
 ceh2310.pdf pdf_icon

CEH2313

CEH2310N-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 6.2A , RDS(ON) = 33m @VGS = 10V. RDS(ON) = 38m @VGS = 4.5V. RDS(ON) = 50m @VGS = 2.5V. RDS(ON) = 60m @VGS = 1.8V. D(1,2,5,6,)High dense cell design for extremely low RDS(ON).Rugged and reliable.Lead-free plating ; RoHS compliant.45TSOP-6 package.6G(3)321S(4)TSOP-6ABSOLUTE

 9.1. Size:446K  cet
 ceh2321.pdf pdf_icon

CEH2313

CEH2321P-Channel Enhancement Mode Field Effect TransistorFEATURES-20V, -4.8A, RDS(ON) = 55m @VGS = -4.5V. RDS(ON) = 62m @VGS = -2.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.D(1,2,5,6,)Lead-free plating ; RoHS compliant.TSOP-6 package.456G(3)321S(4)TSOP-6ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter S

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Datasheet: CED4311 , CED6601 , CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , 20N50 , CEH2321 , CEH2321A , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 .

History: FIR11NS70AFG | H7N0312LM

Keywords - CEH2313 MOSFET datasheet

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