CEM2401 MOSFET. Datasheet pdf. Equivalent
Type Designator: CEM2401
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 2.5 W
Maximum Drain-Source Voltage |Vds|: 20 V
Maximum Gate-Source Voltage |Vgs|: 12 V
Maximum Drain Current |Id|: 6 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 10 nS
Drain-Source Capacitance (Cd): 200 pF
Maximum Drain-Source On-State Resistance (Rds): 0.044 Ohm
Package: SO8
CEM2401 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CEM2401 Datasheet (PDF)
1.1. cem2401.pdf 
Size:424K _cet
CEM2401 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -6A, RDS(ON) = 44m? @VGS = -4.5V. RDS(ON) = 65m? @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise no
4.1. cem2407.pdf Size:440K _cet
CEM2407 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -5.3A, RDS(ON) = 45m? @VGS = -4.5V. RDS(ON) = 65m? @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D1 D1 D2 D2 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless othe
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