CEM2407 Datasheet and Replacement
Type Designator: CEM2407
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id| ⓘ - Maximum Drain Current: 5.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 13 nC
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 200 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
Package: SO8
CEM2407 Datasheet (PDF)
cem2407.pdf

CEM2407P-Channel Enhancement Mode Field Effect TransistorFEATURES-20V, -5.3A, RDS(ON) = 45m @VGS = -4.5V. RDS(ON) = 65m @VGS = -2.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired. D1 D1 D2 D28 7 6 5Surface mount Package.SO-81 2 3 41S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS TA = 25 C unle
cem2401.pdf

CEM2401P-Channel Enhancement Mode Field Effect TransistorFEATURES-20V, -6A, RDS(ON) = 44m @VGS = -4.5V. RDS(ON) = 65m @VGS = -2.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless other
Datasheet: CEH2321 , CEH2321A , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , STP80NF70 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , CEM3407L , CEM4201 .
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