All MOSFET. CEM2407 Datasheet

 

CEM2407 Datasheet and Replacement


   Type Designator: CEM2407
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 5.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: SO8
 

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CEM2407 Datasheet (PDF)

 ..1. Size:440K  cet
 cem2407.pdf pdf_icon

CEM2407

CEM2407P-Channel Enhancement Mode Field Effect TransistorFEATURES-20V, -5.3A, RDS(ON) = 45m @VGS = -4.5V. RDS(ON) = 65m @VGS = -2.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired. D1 D1 D2 D28 7 6 5Surface mount Package.SO-81 2 3 41S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS TA = 25 C unle

 8.1. Size:424K  cet
 cem2401.pdf pdf_icon

CEM2407

CEM2401P-Channel Enhancement Mode Field Effect TransistorFEATURES-20V, -6A, RDS(ON) = 44m @VGS = -4.5V. RDS(ON) = 65m @VGS = -2.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless other

Datasheet: CEH2321 , CEH2321A , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , STP80NF70 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , CEM3407L , CEM4201 .

History: IRFP152 | IPD80R2K0P7 | 2SK3447 | IRF744

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