All MOSFET. CEM4201 Datasheet

 

CEM4201 MOSFET. Datasheet pdf. Equivalent

Type Designator: CEM4201

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 2.5 W

Maximum Drain-Source Voltage |Vds|: 40 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 7.5 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 6 nS

Drain-Source Capacitance (Cd): 220 pF

Maximum Drain-Source On-State Resistance (Rds): 0.028 Ohm

Package: SO8

CEM4201 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CEM4201 Datasheet (PDF)

0.1. cem4201.pdf Size:411K _cet

CEM4201 CEM4201

CEM4201P-Channel Enhancement Mode Field Effect TransistorFEATURES-40V, -7.5A, RDS(ON) = 28m @VGS = -10V. RDS(ON) = 38m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless othe

8.1. cem4207.pdf Size:441K _cet

CEM4201 CEM4201

CEM4207P-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES-40V, -7A, RDS(ON) = 30m @VGS = -10V. RDS(ON) = 40m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D1 D1 D2 D2Lead-free plating ; RoHS compliant.8 7 6 5Surface mount Package.SO-81 2 3 41S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS

8.2. cem4204.pdf Size:407K _cet

CEM4201 CEM4201

CEM4204N-Channel Enhancement Mode Field Effect TransistorFEATURES40V, 7.3A, RDS(ON) = 28m @VGS = 10V. RDS(ON) = 42m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwis

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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