All MOSFET. CEM4948 Datasheet

 

CEM4948 MOSFET. Datasheet pdf. Equivalent

Type Designator: CEM4948

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 2 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 3.1 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 9 nS

Drain-Source Capacitance (Cd): 170 pF

Maximum Drain-Source On-State Resistance (Rds): 0.12 Ohm

Package: SO8

CEM4948 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CEM4948 Datasheet (PDF)

0.1. cem4948.pdf Size:141K _cet

CEM4948
CEM4948

CEM4948 Dual P-Channel Enhancement Mode Field Effect Transistor FEATURES 5 -60V, -3.1A, RDS(ON) = 120mΩ @VGS = -10V. RDS(ON) = 150mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D1 D1 D2 D2 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA =

9.1. cem4953h.pdf Size:424K _cet

CEM4948
CEM4948

CEM4953H Dual P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -4.5A, RDS(ON) = 64mΩ @VGS = -10V. RDS(ON) = 95mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D1 D1 D2 D2 Lead-free plating ; RoHS compliant. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM

9.2. cem4953a.pdf Size:332K _cet

CEM4948
CEM4948

CEM4953A Dual P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -4.5A, RDS(ON) = 58mΩ @VGS = -10V. RDS(ON) = 85mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D1 D1 D2 D2 Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25

 9.3. cem4953.pdf Size:366K _cet

CEM4948
CEM4948

CEM4953 Dual P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -4.9A, RDS(ON) = 53mΩ @VGS = -10V. RDS(ON) = 95mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D1 D1 D2 D2 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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