CEM4948 Datasheet. Specs and Replacement
Type Designator: CEM4948 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 170 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: SO8
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CEM4948 datasheet
cem4948.pdf
CEM4948 Dual P-Channel Enhancement Mode Field Effect Transistor FEATURES 5 -60V, -3.1A, RDS(ON) = 120m @VGS = -10V. RDS(ON) = 150m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D1 D1 D2 D2 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA =... See More ⇒
cem4946.pdf
CEM4946 www.VBsemi.tw Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 100 % Rg and UIS tested RDS(on) ( ) at VGS = 10 V 0.040 RDS(on) ( ) at VGS = 4.5 V 0.055 ID (A) per leg 7 Configuration Dual SO-8 Dual D2 D1 D2 D2 5 D1 6 D1 7 8 G1 G2 4 G2 3 3 S1 S2 S2 S2 2 2 G G1 1 1 N-Channel MOSFET N-Channel ... See More ⇒
cem4953a.pdf
CEM4953A Dual P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -4.5A, RDS(ON) = 58m @VGS = -10V. RDS(ON) = 85m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D1 D1 D2 D2 Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 ... See More ⇒
Detailed specifications: CEM3317, CEM3405L, CEM3407L, CEM4201, CEM4207, CEM4301, CEM4311, CEM4435A, MMIS60R580P, CEM4953, CEM4953A, CEM4953H, CEM6601, CEM6607, CEM6861, CEM6867, CEM8311
Keywords - CEM4948 MOSFET specs
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