CEM4948 Datasheet and Replacement
Type Designator: CEM4948
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 170 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: SO8
CEM4948 substitution
CEM4948 Datasheet (PDF)
cem4948.pdf

CEM4948Dual P-Channel Enhancement Mode Field Effect TransistorFEATURES5-60V, -3.1A, RDS(ON) = 120m @VGS = -10V. RDS(ON) = 150m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.D1 D1 D2 D28 7 6 5Surface mount Package.SO-81 2 3 41S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS TA =
cem4946.pdf

CEM4946www.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Channel
cem4953a.pdf

CEM4953ADual P-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -4.5A, RDS(ON) = 58m @VGS = -10V. RDS(ON) = 85m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D1 D1 D2 D2Lead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS TA = 25
Datasheet: CEM3317 , CEM3405L , CEM3407L , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , AO3401 , CEM4953 , CEM4953A , CEM4953H , CEM6601 , CEM6607 , CEM6861 , CEM6867 , CEM8311 .
History: APT1004R2BN | TK22A65X5 | FK30SM-6 | AP65SL190DP | IPD80R2K8CE | TK20D60U | SFG280N08KF
Keywords - CEM4948 MOSFET datasheet
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History: APT1004R2BN | TK22A65X5 | FK30SM-6 | AP65SL190DP | IPD80R2K8CE | TK20D60U | SFG280N08KF



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