CEM6861 Datasheet and Replacement
Type Designator: CEM6861
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 3.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 12 nC
trⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 65 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
Package: SO8
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CEM6861 Datasheet (PDF)
cem6861.pdf

CEM6861P-Channel Enhancement Mode Field Effect TransistorFEATURES-60V, -3.5A, RDS(ON) = 125m @VGS = -10V. RDS(ON) = 169m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless ot
cem6867.pdf

CEM6867Dual P-Channel Enhancement Mode Field Effect TransistorFEATURES-60V, -3.1A, RDS(ON) = 130m @VGS = -10V. RDS(ON) = 170m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D1 D1 D2 D2Lead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 4S1 G1 S2 G21ABSOLUTE MAXIMUM RATINGS TA = 25
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: AP4565GM | AP4563GM | 5N65KL-TF1-T | AP60SL150AP
Keywords - CEM6861 MOSFET datasheet
CEM6861 cross reference
CEM6861 equivalent finder
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History: AP4565GM | AP4563GM | 5N65KL-TF1-T | AP60SL150AP



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