All MOSFET. CEM6861 Datasheet

 

CEM6861 Datasheet and Replacement


   Type Designator: CEM6861
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
   Package: SO8
 

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CEM6861 Datasheet (PDF)

 ..1. Size:440K  cet
 cem6861.pdf pdf_icon

CEM6861

CEM6861P-Channel Enhancement Mode Field Effect TransistorFEATURES-60V, -3.5A, RDS(ON) = 125m @VGS = -10V. RDS(ON) = 169m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless ot

 8.1. Size:413K  cet
 cem6867.pdf pdf_icon

CEM6861

CEM6867Dual P-Channel Enhancement Mode Field Effect TransistorFEATURES-60V, -3.1A, RDS(ON) = 130m @VGS = -10V. RDS(ON) = 170m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D1 D1 D2 D2Lead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 4S1 G1 S2 G21ABSOLUTE MAXIMUM RATINGS TA = 25

Datasheet: CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A , CEM4953H , CEM6601 , CEM6607 , MMIS60R580P , CEM6867 , CEM8311 , CEM8435A , CEM9407A , CEM9435 , CEM9435A , CEM9953A , CEN2301 .

History: IRFSL3107PBF | AON6206

Keywords - CEM6861 MOSFET datasheet

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