CEM8435A Datasheet and Replacement
Type Designator: CEM8435A
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 870 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
Package: SO8
CEM8435A substitution
CEM8435A Datasheet (PDF)
cem8435a.pdf

CEM8435AP-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -7.9A, RDS(ON) = 24m @VGS = -10V. RDS(ON) = 40m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless oth
Datasheet: CEM4953 , CEM4953A , CEM4953H , CEM6601 , CEM6607 , CEM6861 , CEM6867 , CEM8311 , IRF1405 , CEM9407A , CEM9435 , CEM9435A , CEM9953A , CEN2301 , CEP05P03 , CEP12P10 , CEP14P20 .
History: IRLML6402G | IRLML9301TR | SSG4501
Keywords - CEM8435A MOSFET datasheet
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History: IRLML6402G | IRLML9301TR | SSG4501



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