All MOSFET. CEM8435A Datasheet

 

CEM8435A Datasheet and Replacement


   Type Designator: CEM8435A
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 870 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: SO8
 

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CEM8435A Datasheet (PDF)

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CEM8435A

CEM8435AP-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -7.9A, RDS(ON) = 24m @VGS = -10V. RDS(ON) = 40m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless oth

Datasheet: CEM4953 , CEM4953A , CEM4953H , CEM6601 , CEM6607 , CEM6861 , CEM6867 , CEM8311 , IRF1405 , CEM9407A , CEM9435 , CEM9435A , CEM9953A , CEN2301 , CEP05P03 , CEP12P10 , CEP14P20 .

History: IPD90N04S4L-04 | FDS7066N7 | ME7810S-G | BSO200N03 | RQ3E150MN | CSD19505KCS | STU6N62K3

Keywords - CEM8435A MOSFET datasheet

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