CEN2301 Datasheet and Replacement
Type Designator: CEN2301
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 2.7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 4.5 nC
trⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 90 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
Package: SOT23T
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CEN2301 Datasheet (PDF)
cen2301.pdf

CEN2301P-Channel Enhancement Mode Field Effect TransistorFEATURES-20V, -2.7A, RDS(ON) = 110m @VGS = -4.5V. RDS(ON) = 160m @VGS = -2.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.DLead-free plating ; RoHS compliant.SOT-23-T package.GDSGSSOT-23-TABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit Units
cen2307a.pdf

CEN2307AP-Channel Enhancement Mode Field Effect TransistorPRELIMINARYFEATURES-30V, -3.2A, RDS(ON) = 78m @VGS = -10V. RDS(ON) = 120m @VGS = -4.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.DLead-free plating ; RoHS compliant.SOT-23 package.GDSGSSOT-23-TABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Lim
cen2321a.pdf

CEN2321APRELIMINARYP-Channel Enhancement Mode Field Effect TransistorFEATURES-20V, -3.7A, RDS(ON) = 60m @VGS = -4.5V. RDS(ON) = 80m @VGS = -2.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.DLead-free plating ; RoHS compliant.SOT-23 package.GDSGSSOT-23ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: STW20N95K5 | STV240N75F3
Keywords - CEN2301 MOSFET datasheet
CEN2301 cross reference
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CEN2301 replacement
History: STW20N95K5 | STV240N75F3



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