CEN2301 Specs and Replacement
Type Designator: CEN2301
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 2.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 90 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
Package: SOT23T
CEN2301 substitution
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CEN2301 datasheet
cen2301.pdf
CEN2301 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -2.7A, RDS(ON) = 110m @VGS = -4.5V. RDS(ON) = 160m @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead-free plating ; RoHS compliant. SOT-23-T package. G D S G S SOT-23-T ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units ... See More ⇒
cen2307a.pdf
CEN2307A P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -3.2A, RDS(ON) = 78m @VGS = -10V. RDS(ON) = 120m @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead-free plating ; RoHS compliant. SOT-23 package. G D S G S SOT-23-T ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Lim... See More ⇒
cen2321a.pdf
CEN2321A PRELIMINARY P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -3.7A, RDS(ON) = 60m @VGS = -4.5V. RDS(ON) = 80m @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead-free plating ; RoHS compliant. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit... See More ⇒
Detailed specifications: CEM6861, CEM6867, CEM8311, CEM8435A, CEM9407A, CEM9435, CEM9435A, CEM9953A, K2611, CEP05P03, CEP12P10, CEP14P20, CEP15P15, CEP20P06, CEP20P10, CEP30P03, CEP35P10
Keywords - CEN2301 MOSFET specs
CEN2301 cross reference
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CEN2301 replacement
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