All MOSFET. CEN2301 Datasheet

 

CEN2301 Datasheet and Replacement


   Type Designator: CEN2301
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 2.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: SOT23T
 

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CEN2301 Datasheet (PDF)

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 cen2301.pdf pdf_icon

CEN2301

CEN2301P-Channel Enhancement Mode Field Effect TransistorFEATURES-20V, -2.7A, RDS(ON) = 110m @VGS = -4.5V. RDS(ON) = 160m @VGS = -2.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.DLead-free plating ; RoHS compliant.SOT-23-T package.GDSGSSOT-23-TABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit Units

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 cen2307a.pdf pdf_icon

CEN2301

CEN2307AP-Channel Enhancement Mode Field Effect TransistorPRELIMINARYFEATURES-30V, -3.2A, RDS(ON) = 78m @VGS = -10V. RDS(ON) = 120m @VGS = -4.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.DLead-free plating ; RoHS compliant.SOT-23 package.GDSGSSOT-23-TABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Lim

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 cen2321a.pdf pdf_icon

CEN2301

CEN2321APRELIMINARYP-Channel Enhancement Mode Field Effect TransistorFEATURES-20V, -3.7A, RDS(ON) = 60m @VGS = -4.5V. RDS(ON) = 80m @VGS = -2.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.DLead-free plating ; RoHS compliant.SOT-23 package.GDSGSSOT-23ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit

Datasheet: CEM6861 , CEM6867 , CEM8311 , CEM8435A , CEM9407A , CEM9435 , CEM9435A , CEM9953A , K2611 , CEP05P03 , CEP12P10 , CEP14P20 , CEP15P15 , CEP20P06 , CEP20P10 , CEP30P03 , CEP35P10 .

History: CEF730G

Keywords - CEN2301 MOSFET datasheet

 CEN2301 cross reference
 CEN2301 equivalent finder
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 CEN2301 replacement

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