CEP50P03 Datasheet and Replacement. Cross Reference Search

CEP50P03 Datasheet (PDF)

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CEP50P03/CEB50P03P-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -47A, RDS(ON) =20m @VGS = -10V.RDS(ON) =32m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc

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http://www.ncepower.com NCEP50P80AKNCE P-Channel Super Trench Power MOSFET Description The NCEP50P80AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

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http://www.ncepower.com NCEP50P80NCE P-Channel Super Trench Power MOSFET Description The NCEP50P80 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch

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http://www.ncepower.com NCEP50P80ANCE P-Channel Super Trench Power MOSFET Description The NCEP50P80A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

Datasheet: CEP05P03 , CEP12P10 , CEP14P20 , CEP15P15 , CEP20P06 , CEP20P10 , CEP30P03 , CEP35P10 , BS170 , CEP6601 , CEP95P04 , CES2301 , CES2303 , CES2305 , CES2307 , CES2307A , CES2309 .