All MOSFET. CEP50P03 Datasheet

 

CEP50P03 Datasheet and Replacement


   Type Designator: CEP50P03
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 79 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 47 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 550 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TO220
 

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CEP50P03 Datasheet (PDF)

 ..1. Size:128K  cet
cep50p03 ceb50p03.pdf pdf_icon

CEP50P03

CEP50P03/CEB50P03P-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -47A, RDS(ON) =20m @VGS = -10V.RDS(ON) =32m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc

 8.1. Size:344K  ncepower
ncep50p80ak.pdf pdf_icon

CEP50P03

http://www.ncepower.com NCEP50P80AKNCE P-Channel Super Trench Power MOSFET Description The NCEP50P80AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

 8.2. Size:312K  ncepower
ncep50p80.pdf pdf_icon

CEP50P03

http://www.ncepower.com NCEP50P80NCE P-Channel Super Trench Power MOSFET Description The NCEP50P80 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch

 8.3. Size:339K  ncepower
ncep50p80a.pdf pdf_icon

CEP50P03

http://www.ncepower.com NCEP50P80ANCE P-Channel Super Trench Power MOSFET Description The NCEP50P80A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

Datasheet: CEP05P03 , CEP12P10 , CEP14P20 , CEP15P15 , CEP20P06 , CEP20P10 , CEP30P03 , CEP35P10 , BS170 , CEP6601 , CEP95P04 , CES2301 , CES2303 , CES2305 , CES2307 , CES2307A , CES2309 .

History: KNY3406C | JCS740RC | IRF3704ZPBF | IXTQ182N055T | UPA2738GR | IPP35CN10NG | SPE65R360G

Keywords - CEP50P03 MOSFET datasheet

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