All MOSFET. CEP6601 Datasheet

 

CEP6601 MOSFET. Datasheet pdf. Equivalent


   Type Designator: CEP6601
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 19 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 22.6 nC
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.086 Ohm
   Package: TO220

 CEP6601 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CEP6601 Datasheet (PDF)

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 cep6601 ceb6601 cef6601.pdf

CEP6601 CEP6601

CEP6601/CEB6601 CEF6601P-Channel Enhancement Mode Field Effect TransistorFEATURES-60V, -19A, RDS(ON) = 86m @VGS = -10V. RDS(ON) = 125m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.GCEB SERIESCEP SERIES CEF SERIESTO-263(DD-PAK)TO-220 TO-220F SABSOLUTE MAXIMUM RATING

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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