All MOSFET. CEP6601 Datasheet

 

CEP6601 Datasheet and Replacement


   Type Designator: CEP6601
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 19 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.086 Ohm
   Package: TO220
 

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CEP6601 Datasheet (PDF)

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CEP6601

CEP6601/CEB6601 CEF6601P-Channel Enhancement Mode Field Effect TransistorFEATURES-60V, -19A, RDS(ON) = 86m @VGS = -10V. RDS(ON) = 125m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.GCEB SERIESCEP SERIES CEF SERIESTO-263(DD-PAK)TO-220 TO-220F SABSOLUTE MAXIMUM RATING

Datasheet: CEP12P10 , CEP14P20 , CEP15P15 , CEP20P06 , CEP20P10 , CEP30P03 , CEP35P10 , CEP50P03 , IRFZ44N , CEP95P04 , CES2301 , CES2303 , CES2305 , CES2307 , CES2307A , CES2309 , CES2313 .

History: MTN7N60FP | HGI080N08SL | S68N08ZR | IXTA8N50P | IXTA80N10T | HTM058N03P | CEA3055L

Keywords - CEP6601 MOSFET datasheet

 CEP6601 cross reference
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