CEP6601 Specs and Replacement

Type Designator: CEP6601

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 62.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 19 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 95 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.086 Ohm

Package: TO220

CEP6601 substitution

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CEP6601 datasheet

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CEP6601

CEP6601/CEB6601 CEF6601 P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -19A, RDS(ON) = 86m @VGS = -10V. RDS(ON) = 125m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. G CEB SERIES CEP SERIES CEF SERIES TO-263(DD-PAK) TO-220 TO-220F S ABSOLUTE MAXIMUM RATING... See More ⇒

Detailed specifications: CEP12P10, CEP14P20, CEP15P15, CEP20P06, CEP20P10, CEP30P03, CEP35P10, CEP50P03, IRFZ44N, CEP95P04, CES2301, CES2303, CES2305, CES2307, CES2307A, CES2309, CES2313

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.