All MOSFET. CET6861 Datasheet

 

CET6861 Datasheet and Replacement


   Type Designator: CET6861
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 3.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: SOT223
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CET6861 Datasheet (PDF)

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CET6861

CET6861P-Channel Enhancement Mode Field Effect TransistorFEATURES-60V, -3.5A, RDS(ON) = 130m @VGS = -10V. RDS(ON) = 170m @VGS = -4.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.DLead free product is acquired.SOT-223 package.GDSDGSOT-223SABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain

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History: DMN60H3D5SK3 | TK2P60D | DMP2104LP | IRFBG20 | DMN2300UFB4 | RTF020P02TL

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