All MOSFET. CET6861 Datasheet

 

CET6861 MOSFET. Datasheet pdf. Equivalent


   Type Designator: CET6861
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 3.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10.8 nC
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: SOT223

 CET6861 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CET6861 Datasheet (PDF)

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 cet6861.pdf

CET6861 CET6861

CET6861P-Channel Enhancement Mode Field Effect TransistorFEATURES-60V, -3.5A, RDS(ON) = 130m @VGS = -10V. RDS(ON) = 170m @VGS = -4.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.DLead free product is acquired.SOT-223 package.GDSDGSOT-223SABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: FCP650N80Z

 

 
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