CEU20P06 PDF and Equivalents Search

 

CEU20P06 Specs and Replacement

Type Designator: CEU20P06

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 42 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.5 nS

Cossⓘ - Output Capacitance: 140 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm

Package: TO252

CEU20P06 substitution

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CEU20P06 datasheet

 ..1. Size:428K  cet
 ced20p06 ceu20p06.pdf pdf_icon

CEU20P06

CED20P06/CEU20P06 P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -13A, RDS(ON) = 125m @VGS = -10V. RDS(ON) = 175m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE... See More ⇒

 8.1. Size:373K  cet
 ced20p10 ceu20p10.pdf pdf_icon

CEU20P06

CED20P10/CEU20P10 PRELIMINARY P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -16A, RDS(ON) = 130m @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATING... See More ⇒

 9.1. Size:237K  cet
 ced20n02 ceu20n02.pdf pdf_icon

CEU20P06

CED20N02/CEU20N02 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 18A, RDS(ON) = 42m @VGS = 4.5V. RDS(ON) = 75m @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXI... See More ⇒

 9.2. Size:808K  cn vbsemi
 ceu20n06.pdf pdf_icon

CEU20P06

CEU20N06 www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise no... See More ⇒

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Detailed specifications: CET4301, CET4435A, CET6601, CET6861, CET9435A, CEU05P03, CEU11P20, CEU12P10, P55NF06, CEU20P10, CEU2303, CEU30P10, CEU3301, CEU3423, CEU4201, CEU4301, CEU4311

Keywords - CEU20P06 MOSFET specs

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