CEU2303 Datasheet and Replacement
Type Designator: CEU2303
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 33 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 90 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: TO252
CEU2303 substitution
CEU2303 Datasheet (PDF)
ced2303 ceu2303.pdf
CED2303/CEU2303P-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES-30V, -9A, RDS(ON) = 200m @VGS = -10V. RDS(ON) = 320m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).DHigh power and current handing capability.Lead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)
Datasheet: CET6601 , CET6861 , CET9435A , CEU05P03 , CEU11P20 , CEU12P10 , CEU20P06 , CEU20P10 , 7N65 , CEU30P10 , CEU3301 , CEU3423 , CEU4201 , CEU4301 , CEU4311 , CEU6601 , CEU6861 .
History: CEF730G
Keywords - CEU2303 MOSFET datasheet
CEU2303 cross reference
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets
History: CEF730G
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