CEU30P10 Datasheet and Replacement
Type Designator: CEU30P10
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 345 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.076 Ohm
Package: TO252
CEU30P10 substitution
CEU30P10 Datasheet (PDF)
ced30p10 ceu30p10.pdf

CED30P10/CEU30P10P-Channel Enhancement Mode Field Effect TransistorFEATURES-100V, -30A, RDS(ON) = 76m @VGS = -10V. RDS(ON) = 92m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE
ceu3060 ced3060.pdf

CED3060/CEU3060N-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 75A , RDS(ON) = 6.6m @VGS = 10V. RDS(ON) = 9.5m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXI
Datasheet: CET6861 , CET9435A , CEU05P03 , CEU11P20 , CEU12P10 , CEU20P06 , CEU20P10 , CEU2303 , AON7408 , CEU3301 , CEU3423 , CEU4201 , CEU4301 , CEU4311 , CEU6601 , CEU6861 , CEU95P04 .
Keywords - CEU30P10 MOSFET datasheet
CEU30P10 cross reference
CEU30P10 equivalent finder
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History: LPM9029C | PDS4909



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