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CEU6861 PDF Specs and Replacement


   Type Designator: CEU6861
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.132 Ohm
   Package: TO252
 

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CEU6861 PDF Specs

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CEU6861

CED6861/CEU6861 P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -12A, RDS(ON) = 132m @VGS = -10V. RDS(ON) = 195m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE M... See More ⇒

Detailed specifications: CEU2303 , CEU30P10 , CEU3301 , CEU3423 , CEU4201 , CEU4301 , CEU4311 , CEU6601 , IRF9540N , CEU95P04 , 2N7000A , 2N7000K , 2N7002KA , KTJ6131E , KTJ6131V , KTJ6164S , KTK5131E .

Keywords - CEU6861 MOSFET specs

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