CEU6861 Datasheet and Replacement
Type Designator: CEU6861
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 31 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 65 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.132 Ohm
Package: TO252
CEU6861 substitution
CEU6861 Datasheet (PDF)
ced6861 ceu6861.pdf

CED6861/CEU6861P-Channel Enhancement Mode Field Effect TransistorFEATURES-60V, -12A, RDS(ON) = 132m @VGS = -10V. RDS(ON) = 195m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE M
Datasheet: CEU2303 , CEU30P10 , CEU3301 , CEU3423 , CEU4201 , CEU4301 , CEU4311 , CEU6601 , K4145 , CEU95P04 , 2N7000A , 2N7000K , 2N7002KA , KTJ6131E , KTJ6131V , KTJ6164S , KTK5131E .
History: DMN601K
Keywords - CEU6861 MOSFET datasheet
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History: DMN601K



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