CEU6861 Datasheet. Specs and Replacement

Type Designator: CEU6861  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 31 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 65 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.132 Ohm

Package: TO252

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CEU6861 datasheet

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CEU6861

CED6861/CEU6861 P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -12A, RDS(ON) = 132m @VGS = -10V. RDS(ON) = 195m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE M... See More ⇒

Detailed specifications: CEU2303, CEU30P10, CEU3301, CEU3423, CEU4201, CEU4301, CEU4311, CEU6601, IRF1010E, CEU95P04, 2N7000A, 2N7000K, 2N7002KA, KTJ6131E, KTJ6131V, KTJ6164S, KTK5131E

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