All MOSFET. CEU6861 Datasheet

 

CEU6861 Datasheet and Replacement


   Type Designator: CEU6861
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.132 Ohm
   Package: TO252
 

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CEU6861 Datasheet (PDF)

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CEU6861

CED6861/CEU6861P-Channel Enhancement Mode Field Effect TransistorFEATURES-60V, -12A, RDS(ON) = 132m @VGS = -10V. RDS(ON) = 195m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE M

Datasheet: CEU2303 , CEU30P10 , CEU3301 , CEU3423 , CEU4201 , CEU4301 , CEU4311 , CEU6601 , IRF1010E , CEU95P04 , 2N7000A , 2N7000K , 2N7002KA , KTJ6131E , KTJ6131V , KTJ6164S , KTK5131E .

History: WSF90P03 | FHS100N09A | IRFR9024NPBF | MSB22A04Q8 | FDD9409L-F085 | WSP4805 | WSF07N10

Keywords - CEU6861 MOSFET datasheet

 CEU6861 cross reference
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