KF80N08F Datasheet and Replacement
Type Designator: KF80N08F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 62.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 56 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 228 nS
Cossⓘ - Output Capacitance: 840 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: TO220IS
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KF80N08F Datasheet (PDF)
kf80n08p f.pdf

KF80N08P/FSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF80N08PAIt s mainly suitable for low voltage applications such as automotive, OCDC/DC converters and a load switch in battery powered applicationsFE DIM MILLIMETERSG_+A 9.9 0.2BB 15.95 MAXQC 1.3+0.1/-0.05_FEATURES I+D 0.8 0.1_E 3.6 + 0.2VDSS= 75V, I
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: N0301P | UF3205L-T3P-T | TTB85N08A | LSB80R350GT | RZL025P01TR | ECH8662 | IXTH40N30
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History: N0301P | UF3205L-T3P-T | TTB85N08A | LSB80R350GT | RZL025P01TR | ECH8662 | IXTH40N30



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