KMA3D6N20SA Datasheet and Replacement
Type Designator: KMA3D6N20SA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
|Id| ⓘ - Maximum Drain Current: 3.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 135 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
Package: SOT23
KMA3D6N20SA substitution
KMA3D6N20SA Datasheet (PDF)
kma3d6n20sa.pdf

SEMICONDUCTOR KMA3D6N20SATECHNICAL DATAN-Ch Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingEtime, low on resistance, low gate charge and excellent avalancheL B LDIM MILLIMETERScharacteristics. It is mainly suitable for portable equipment._+A 2.93 0.20B 1.30+0.20/-0.15C 1.30 MAX23 D 0.40+0.15/-0.05E 2.40+0.30
kma3d7p20sa.pdf

SEMICONDUCTOR KMA3D7P20SATECHNICAL DATAP-Ch Trench MOSFETGeneral DescriptionIt s mainly suitable for use as a load switch.EL B LFEATURES DIM MILLIMETERS_+A 2.93 0.20VDSS=-20V, ID=-3.7AB 1.30+0.20/-0.15C 1.30 MAXDrain to Source on-state Resistance23 D 0.40+0.15/-0.05E 2.40+0.30/-0.20RDS(ON)=76m(Max.) @ VGS=-4.5V1G 1.90RDS(ON)=112m(Max.) @ VGS=-
kma3d0n20sa.pdf

SEMICONDUCTOR KMA3D0N20SATECHNICAL DATAN-Ch Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingEtime, low on resistance, low gate charge and excellent avalancheL B LDIM MILLIMETERScharacteristics. It is mainly suitable for portable equipment._+A 2.93 0.20B 1.30+0.20/-0.15C 1.30 MAX23 D 0.40+0.15/-0.05E 2.40+0.30
Datasheet: KF80N08F , KF80N08P , KMA010P20Q , KMA2D0DP20X , KMA2D4P20SA , KMA2D7DP20X , KMA2D8P20X , KMA3D0N20SA , STP80NF70 , KMA4D5P20X , KMA4D5P20XA , KMA5D8DP20Q , KMA6D5P20Q , KMA7D0NP30Q , KMB010P30QA , KMB012N30Q , KMB012N40DA .
Keywords - KMA3D6N20SA MOSFET datasheet
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