All MOSFET. KMB030N30D Datasheet

 

KMB030N30D MOSFET. Datasheet pdf. Equivalent


   Type Designator: KMB030N30D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 7.5 nC
   trⓘ - Rise Time: 23.5 nS
   Cossⓘ - Output Capacitance: 196 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: DPAK

 KMB030N30D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

KMB030N30D Datasheet (PDF)

 ..1. Size:459K  kec
 kmb030n30d.pdf

KMB030N30D KMB030N30D

SEMICONDUCTOR KMB030N30DTECHNICAL DATA N-Ch Trench MOSFETGeneral DescriptionSwitching regulator and DC-DC Converter applications.It s mainly suitable for power management in PC,portable equipment and battery powered systems.AHDIM MILLIMETERSJC D_6.6 0.2A +_B 6.1 + 0.2_C 5.33 + 0.1FEATURES _1.08 0.2D +_E 2.92 + 0.3BVDSS=30V, ID=30A._F 2.28 0.1

 9.1. Size:798K  kec
 kmb035n40dc.pdf

KMB030N30D KMB030N30D

SEMICONDUCTOR KMB035N40DCTECHNICAL DATA N-Ch Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalancheA KDIM MILLIMETERScharacteristics. It is mainly suitable for Back-light Inverter and powerLC D_A 6.60 + 0.20_B 6.10 + 0.20Supply._C 5.34 + 0.30_D 0.70

 9.2. Size:814K  kec
 kmb035n40db.pdf

KMB030N30D KMB030N30D

SEMICONDUCTOR KMB035N40DBTECHNICAL DATA N-Ch Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalancheAcharacteristics. It is mainly suitable for Back-light Inverter and Power KDIM MILLIMETERSLC D_A 6.60 + 0.20Supply._B 6.10 + 0.20_C 5.34 + 0.30_D 0.70

 9.3. Size:823K  kec
 kmb035n40da.pdf

KMB030N30D KMB030N30D

SEMICONDUCTOR KMB035N40DATECHNICAL DATA N-Ch Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalancheA KDIM MILLIMETERSLcharacteristics. It is mainly suitable for Back-light Inverter and PowerC D_A 6.60 + 0.20_B 6.10 + 0.20Supply._C 5.34 + 0.30_D 0.70

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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