All MOSFET. KMB054N40DA Datasheet

 

KMB054N40DA MOSFET. Datasheet pdf. Equivalent

Type Designator: KMB054N40DA

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 45 W

Maximum Drain-Source Voltage |Vds|: 40 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 54 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 20 nS

Drain-Source Capacitance (Cd): 420 pF

Maximum Drain-Source On-State Resistance (Rds): 0.007 Ohm

Package: DPAK

KMB054N40DA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

KMB054N40DA Datasheet (PDF)

1.1. kmb054n40dc.pdf Size:816K _kec

KMB054N40DA
KMB054N40DA

SEMICONDUCTOR KMB054N40DC TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche A K DIM MILLIMETERS L characteristics. It is mainly suitable for Back-light Inverter and Power C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 Supply. _ C 5.34 + 0.30 _ D 0.70 + 0

1.2. kmb054n40db.pdf Size:241K _kec

KMB054N40DA
KMB054N40DA

SEMICONDUCTOR KMB054N40DB TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche A K DIM MILLIMETERS L characteristics. It is mainly suitable for Back-light Inverter and Power C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 Supply. _ C 5.34 + 0.30 _ D 0.70 + 0

1.3. kmb054n40da.pdf Size:237K _kec

KMB054N40DA
KMB054N40DA

SEMICONDUCTOR KMB054N40DA TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche A K DIM MILLIMETERS L characteristics. It is mainly suitable for Back-light Inverter and Power C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 Supply. _ C 5.34 + 0.30 _ D 0.70 + 0

1.4. kmb054n40ia.pdf Size:903K _kec

KMB054N40DA
KMB054N40DA

SEMICONDUCTOR KMB054N40IA TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for Back-light Inverter and Power Supply. FEATURES ·VDSS=40V, ID=54A. ·Low Drain-Source ON Resistance. : RDS(ON)=8.5m?(Max.) @ VGS=10

Datasheet: KMB010P30QA , KMB012N30Q , KMB012N40DA , KMB014P30QA , KMB030N30D , KMB035N40DB , KMB050N60P , KMB050N60PA , IRFP150N , KMB054N40DB , KMB054N45DA , KMB060N40BA , KMB060N60FA , KMB060N60PA , KMB080N75PA , KMB2D0N60SA , KMB3D0P30SA .

 


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