KMB054N40DA. Аналоги и основные параметры
Наименование производителя: KMB054N40DA
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 45 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 54 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 20 ns
Cossⓘ - Выходная емкость: 420 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.007 Ohm
Тип корпуса: DPAK
Аналог (замена) для KMB054N40DA
- подборⓘ MOSFET транзистора по параметрам
KMB054N40DA даташит
kmb054n40da.pdf
SEMICONDUCTOR KMB054N40DA TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche A K DIM MILLIMETERS L characteristics. It is mainly suitable for Back-light Inverter and Power C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 Supply. _ C 5.34 + 0.30 _ D 0.70
kmb054n40dc.pdf
SEMICONDUCTOR KMB054N40DC TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche A K DIM MILLIMETERS L characteristics. It is mainly suitable for Back-light Inverter and Power C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 Supply. _ C 5.34 + 0.30 _ D 0.70
kmb054n40db.pdf
SEMICONDUCTOR KMB054N40DB TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche A K DIM MILLIMETERS L characteristics. It is mainly suitable for Back-light Inverter and Power C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 Supply. _ C 5.34 + 0.30 _ D 0.70
kmb054n40ia.pdf
SEMICONDUCTOR KMB054N40IA TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for Back-light Inverter and Power Supply. FEATURES VDSS=40V, ID=54A. Low Drain-Source ON Resistance. RDS(ON)=8.5m (Max.) @ V
Другие MOSFET... KMB010P30QA , KMB012N30Q , KMB012N40DA , KMB014P30QA , KMB030N30D , KMB035N40DB , KMB050N60P , KMB050N60PA , 75N75 , KMB054N40DB , KMB054N45DA , KMB060N40BA , KMB060N60FA , KMB060N60PA , KMB080N75PA , KMB2D0N60SA , KMB3D0P30SA .
🌐 : EN ES РУ
Список транзисторов
Обновления
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