KMB054N40DA - Даташиты. Аналоги. Основные параметры
Наименование производителя: KMB054N40DA
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 45 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 54 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 20 ns
Cossⓘ - Выходная емкость: 420 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.007 Ohm
Тип корпуса: DPAK
Аналог (замена) для KMB054N40DA
KMB054N40DA Datasheet (PDF)
kmb054n40da.pdf

SEMICONDUCTOR KMB054N40DATECHNICAL DATA N-Ch Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalancheA KDIM MILLIMETERSLcharacteristics. It is mainly suitable for Back-light Inverter and PowerC D_A 6.60 + 0.20_B 6.10 + 0.20Supply._C 5.34 + 0.30_D 0.70
kmb054n40dc.pdf

SEMICONDUCTOR KMB054N40DCTECHNICAL DATA N-Ch Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalancheA KDIM MILLIMETERSLcharacteristics. It is mainly suitable for Back-light Inverter and PowerC D_A 6.60 + 0.20_B 6.10 + 0.20Supply._C 5.34 + 0.30_D 0.70
kmb054n40db.pdf

SEMICONDUCTOR KMB054N40DBTECHNICAL DATA N-Ch Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalancheA KDIM MILLIMETERSLcharacteristics. It is mainly suitable for Back-light Inverter and PowerC D_A 6.60 + 0.20_B 6.10 + 0.20Supply._C 5.34 + 0.30_D 0.70
kmb054n40ia.pdf

SEMICONDUCTOR KMB054N40IATECHNICAL DATA N-Ch Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalanchecharacteristics. It is mainly suitable for Back-light Inverter and PowerSupply.FEATURES VDSS=40V, ID=54A.Low Drain-Source ON Resistance.: RDS(ON)=8.5m(Max.) @ V
Другие MOSFET... KMB010P30QA , KMB012N30Q , KMB012N40DA , KMB014P30QA , KMB030N30D , KMB035N40DB , KMB050N60P , KMB050N60PA , IRF520 , KMB054N40DB , KMB054N45DA , KMB060N40BA , KMB060N60FA , KMB060N60PA , KMB080N75PA , KMB2D0N60SA , KMB3D0P30SA .
History: AON6240 | STD5N52K3 | CED6336 | NCEP02580 | 2SK1322 | SIR808DP | NCEP039N10MD
History: AON6240 | STD5N52K3 | CED6336 | NCEP02580 | 2SK1322 | SIR808DP | NCEP039N10MD



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