FDP5690 Datasheet and Replacement
Type Designator: FDP5690
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 58 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 32 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 160 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
Package: TO220
FDP5690 substitution
FDP5690 Datasheet (PDF)
fdp5690 fdb5690.pdf

July 2000FDP5690/FDB569060V N-Channel PowerTrenchTM MOSFETGeneral Description Features 32 A, 60 V. RDS(ON) = 0.027 @ VGS = 10 VThis N-Channel MOSFET has been designed specifically RDS(ON) = 0.032 @ VGS = 6 V.to improve the overall efficiency of DC/DC convertersusing either synchronous or conventional switching PWM Critical DC electrical parameters specified at ev
fdp5680 fdb5680.pdf

July 2000FDP5680/FDB568060V N-Channel PowerTrenchTM MOSFETGeneral Description Features 40 A, 60 V. RDS(ON) = 0.020 @ VGS = 10 VThis N-Channel MOSFET has been designed specifically RDS(ON) = 0.023 @ VGS = 6 V.to improve the overall efficiency of DC/DC convertersusing either synchronous or conventional switching PWM Critical DC electrical parameters specified at ev
fdb5645 fdp5645.pdf

March 2000FDP5645/FDB564560V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 80 A, 60 V. RDS(ON) = 0.0095 @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 0.011 @ VGS = 6 V.converters using either synchronous or conventionalswitching PWM controllers. Critical DC electrical parameters
Datasheet: FDN357N , FDN358P , FDN359AN , FDN360P , FDN361AN , FDP4020P , FDP4030L , FDP5680 , BS170 , FDP6030BL , FDP6030L , FDP6035AL , FDP6035L , FDP603AL , FDP6670AL , FDP7030BL , FDP7030L .
Keywords - FDP5690 MOSFET datasheet
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