KMB6D0DN35QA Datasheet. Specs and Replacement

Type Designator: KMB6D0DN35QA  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 35 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 170 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm

Package: FLP8

  📄📄 Copy 

KMB6D0DN35QA substitution

- MOSFET ⓘ Cross-Reference Search

 

KMB6D0DN35QA datasheet

 ..1. Size:60K  kec
 kmb6d0dn35qa.pdf pdf_icon

KMB6D0DN35QA

SEMICONDUCTOR KMB6D0DN35QA TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters. H T D P G L FEATURES A VDSS=35V, ID=6A. DIM MILLIMETERS A _ + Drain-Source ON Resistance. 4.85 0.2... See More ⇒

 3.1. Size:826K  kec
 kmb6d0dn35qb.pdf pdf_icon

KMB6D0DN35QA

SEMICONDUCTOR KMB6D0DN35QB TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche H characteristics. It is mainly suitable for DC/DC Converters. T D P G L U FEATURES A VDSS=35V, ID=6A. DIM MILLIMETERS Drain-Source ON Resistance. _ + A... See More ⇒

 5.1. Size:374K  kec
 kmb6d0dn30qb.pdf pdf_icon

KMB6D0DN35QA

SEMICONDUCTOR KMB6D0DN30QB TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche H characteristics. It is mainly suitable for portable equipment and DC-DC T Converter Applications. D P G L U FEATURES A VDSS=30V, ID=6A. DIM MILLIMETERS D... See More ⇒

 5.2. Size:56K  kec
 kmb6d0dn30qa.pdf pdf_icon

KMB6D0DN35QA

SEMICONDUCTOR KMB6D0DN30QA TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and DC-DC H T Converter Applications. D P G L FEATURES A VDSS=30V, ID=6A. DIM MILLIMETERS A _ + ... See More ⇒

SHOW MORE

Detailed specifications: KMB3D9N40TA, KMB4D0N30SA, KMB4D5DN60QA, KMB4D5NP55Q, KMB4D8DN55Q, KMB5D0NP40Q, KMB5D5NP30Q, KMB6D0DN30QA, IRF9640, KMB6D0NP40QA, KMB6D6N30Q, KMB7D0DN40Q, KMB7D0DN40QA, KMB7D0N40QA, KMB7D0NP30Q, KMB7D0NP30QA, KMB7D1DP30QA

Keywords - KMB6D0DN35QA MOSFET specs

 KMB6D0DN35QA cross reference

 KMB6D0DN35QA equivalent finder

 KMB6D0DN35QA pdf lookup

 KMB6D0DN35QA substitution

 KMB6D0DN35QA replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.