KMB7D0NP30QA Specs and Replacement
Type Designator: KMB7D0NP30QA
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 22 V
|Id| ⓘ - Maximum Drain Current: 7(5) A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 27.7(7.8) nS
Cossⓘ - Output Capacitance: 126(137) pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018(0.035) Ohm
Package: FLP8
KMB7D0NP30QA substitution
- MOSFET ⓘ Cross-Reference Search
KMB7D0NP30QA datasheet
kmb7d0np30qa.pdf
SEMICONDUCTOR KMB7D0NP30QA TECHNICAL DATA N and P-Ch Trench MOSFET General Description Switching regulator and DC-DC Converter applications. It s mainly suitable for Back-light Inverter. H T D P G L FEATURES N-Channel A VDSS=30V, ID=7A. DIM MILLIMETERS A _ + RDS(ON)=23.5m (Max.) @ VGS=10V 4.85 0.2 B1 _ 3.94 + 0.2 RDS(ON)=39m (Max.) @ VGS=4.5V B2 _ 6.02+ 0.3 8 5 D _... See More ⇒
kmb7d0np30q.pdf
SEMICONDUCTOR KMB7D0NP30Q TECHNICAL DATA N and P-Ch Trench MOSFET General Description Switching regulator and DC-DC Converter applications. It s mainly suitable for power management in PC, H portable equipment and battery powered systems. T D P G L FEATURES A N-Channel DIM MILLIMETERS VDSS=30V, ID=7A. A 5.05+0.25/-0.20 RDS(ON)=25m (Max.) @ VGS=10V _ 3.90 + 0.3 B1 8 5 _ ... See More ⇒
kmb7d0n40qa.pdf
SEMICONDUCTOR KMB7D0N40QA TECHNICAL DATA N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for power management in pc, portable H T equipment and battery powered systems. D P G L A FEATURES DIM MILLIMETERS A _ + VDSS=4... See More ⇒
kmb7d0dn40q.pdf
SEMICONDUCTOR KMB7D0DN40Q TECHNICAL DATA Dual N-Ch Trench MOSFET General Description Switching regulator and DC-DC Converter applications. It s mainly suitable for power management in PC, H portable equipment and battery powered systems. T D P G L FEATURES A VDSS=40V, ID=7A. DIM MILLIMETERS Low Drain-Source ON Resistance. A 5.05+0.25/-0.20 RDS(ON)=25m (Max.) @ VGS=10V _ 3.90... See More ⇒
Detailed specifications: KMB6D0DN30QA, KMB6D0DN35QA, KMB6D0NP40QA, KMB6D6N30Q, KMB7D0DN40Q, KMB7D0DN40QA, KMB7D0N40QA, KMB7D0NP30Q, IRF840, KMB7D1DP30QA, KMB7D6NP30Q, KMB8D0P30Q, KMB8D2N60QA, KMC7D0CN20C, KMC7D0CN20CA, KML0D6NP20EA, KF13N60N
Keywords - KMB7D0NP30QA MOSFET specs
KMB7D0NP30QA cross reference
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