KMB7D0NP30QA MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: KMB7D0NP30QA
Тип транзистора: MOSFET
Полярность: NP
Максимальная рассеиваемая мощность (Pd): 2 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 22 V
Пороговое напряжение включения |Ugs(th)|: 3 V
Максимально допустимый постоянный ток стока |Id|: 7(5) A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 7.2 nC
Время нарастания (tr): 27.7(7.8) ns
Выходная емкость (Cd): 126(137) pf
Сопротивление сток-исток открытого транзистора (Rds): 0.018(0.035) Ohm
Тип корпуса: FLP8
Аналог (замена) для KMB7D0NP30QA
KMB7D0NP30QA Datasheet (PDF)
kmb7d0np30qa.pdf
SEMICONDUCTOR KMB7D0NP30QATECHNICAL DATA N and P-Ch Trench MOSFETGeneral DescriptionSwitching regulator and DC-DC Converter applications.It s mainly suitable for Back-light Inverter.HTD PG LFEATURES N-ChannelA: VDSS=30V, ID=7A.DIM MILLIMETERSA _+: RDS(ON)=23.5m (Max.) @ VGS=10V 4.85 0.2B1 _3.94 + 0.2: RDS(ON)=39m (Max.) @ VGS=4.5VB2 _6.02+ 0.38 5D _
kmb7d0np30q.pdf
SEMICONDUCTOR KMB7D0NP30QTECHNICAL DATA N and P-Ch Trench MOSFETGeneral DescriptionSwitching regulator and DC-DC Converter applications.It s mainly suitable for power management in PC,Hportable equipment and battery powered systems.TD P GLFEATURES AN-ChannelDIM MILLIMETERS: VDSS=30V, ID=7A.A 5.05+0.25/-0.20: RDS(ON)=25m (Max.) @ VGS=10V_3.90 + 0.3B18 5 _
kmb7d0n40qa.pdf
SEMICONDUCTOR KMB7D0N40QATECHNICAL DATA N-Ch Trench MOSFETGENERAL DESCRIPTIONThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalanchecharacteristics. It is mainly suitable for power management in pc, portable HTequipment and battery powered systems.D PG LAFEATURES DIM MILLIMETERSA _+VDSS=4
kmb7d0dn40q.pdf
SEMICONDUCTOR KMB7D0DN40QTECHNICAL DATA Dual N-Ch Trench MOSFETGeneral DescriptionSwitching regulator and DC-DC Converter applications.It s mainly suitable for power management in PC,Hportable equipment and battery powered systems.TD P GLFEATURES AVDSS=40V, ID=7A.DIM MILLIMETERSLow Drain-Source ON Resistance.A 5.05+0.25/-0.20: RDS(ON)=25m (Max.) @ VGS=10V _3.90
kmb7d0dn40qa.pdf
SEMICONDUCTOR KMB7D0DN40QATECHNICAL DATA Dual N-Ch Trench MOSFETGENERAL DESCRIPTIONThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalanchecharacteristics. It is mainly suitable for power management in PC, portable HTequipment and battery powered systems.D PG LAFEATURES DIM MILLIMETERSA _VDS
kmb7d0dn40qb.pdf
SEMICONDUCTOR KMB7D0DN40QBTECHNICAL DATA Dual N-Ch Trench MOSFETGENERAL DESCRIPTIONThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalancheHcharacteristics. It is mainly suitable for power management in PC, portableTequipment and battery powered systems. D P GLUAFEATURES DIM MILLIMETERSVDS
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: MDS1528URH
