All MOSFET. KF50N06P Datasheet

 

KF50N06P MOSFET. Datasheet pdf. Equivalent


   Type Designator: KF50N06P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 39.5 nC
   trⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 405 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0142 Ohm
   Package: TO220AB

 KF50N06P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

KF50N06P Datasheet (PDF)

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 kf50n06p.pdf

KF50N06P KF50N06P

KF50N06PSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description AThis planar stripe MOSFET has better characteristics, such as fast OCswitching time, low on resistance, low gate charge and excellentFavalanche characteristics. It is mainly suitable for active power factorE DIM MILLIMETERSG_correction , electronic lamp ballasts based on hal

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: KF910

 

 
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