KF50N06P Specs and Replacement
Type Designator: KF50N06P
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 96 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 405 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0142 Ohm
Package: TO220AB
KF50N06P substitution
- MOSFET ⓘ Cross-Reference Search
KF50N06P datasheet
kf50n06p.pdf
KF50N06P SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS G _ correction , electronic lamp ballasts based on hal... See More ⇒
Detailed specifications: KMB8D0P30Q, KMB8D2N60QA, KMC7D0CN20C, KMC7D0CN20CA, KML0D6NP20EA, KF13N60N, KF15N50N, KF17N50N, IRF640N, KTK919S, KTK920BT, KTK920BU, KTK920T, KTK920U, KMB035N40DA, KMB6D0DN30QB, KMB6D0NS30QA
Keywords - KF50N06P MOSFET specs
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