KF50N06P Datasheet and Replacement
Type Designator: KF50N06P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 96 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 50 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 405 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0142 Ohm
Package: TO220AB
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KF50N06P Datasheet (PDF)
kf50n06p.pdf

KF50N06PSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description AThis planar stripe MOSFET has better characteristics, such as fast OCswitching time, low on resistance, low gate charge and excellentFavalanche characteristics. It is mainly suitable for active power factorE DIM MILLIMETERSG_correction , electronic lamp ballasts based on hal
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: P1260AT | 2N80L-TF1-T | BRF5N60 | FQPF3P20 | IRFR310T | 12N80G-T3P-T | NCEA60ND08S
Keywords - KF50N06P MOSFET datasheet
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History: P1260AT | 2N80L-TF1-T | BRF5N60 | FQPF3P20 | IRFR310T | 12N80G-T3P-T | NCEA60ND08S



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