FDP6035AL Datasheet and Replacement
Type Designator: FDP6035AL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 52 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 48 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 330 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: TO220
FDP6035AL substitution
FDP6035AL Datasheet (PDF)
fdp6035al fdb6035al.pdf

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fdp6035l fdb6035l.pdf

April 1998 FDP6035L/FDB6035L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description FeaturesThese N-Channel logic level enhancement mode power 58 A, 30 V. RDS(ON) = 0.011 @ VGS=10 VRDS(ON) = 0.019 @ VGS=4.5 V.field effect transistors are produced using Fairchild'sproprietary, high cell density, DMOS technology. This veryLow gate charge (typic
fdp603al fdb603al.pdf

April 1998 FDP603AL / FDB603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description FeaturesThese N-Channel logic level enhancement mode power field 33 A, 30 V. RDS(ON) = 0.022 @ VGS=10 VRDS(ON) = 0.036 @ VGS=4.5 V.effect transistors are produced using Fairchild's proprietary,high cell density, DMOS technology. This very high densityCritica
fdp6030l fdb6030l.pdf

August 2003FDP6030L/FDB6030LN-Channel Logic Level PowerTrench MOSFETGeneral Description FeaturesThis N-Channel Logic Level MOSFET has been 48 A, 30 V RDS(ON) = 13 m @ VGS = 10 Vdesigned specifically to improve the overall efficiency ofRDS(ON) = 17 m @ VGS = 4.5 VDC/DC converters using either synchronous orconventional switching PWM controllers. Critical DC electr
Datasheet: FDN360P , FDN361AN , FDP4020P , FDP4030L , FDP5680 , FDP5690 , FDP6030BL , FDP6030L , IRF740 , FDP6035L , FDP603AL , FDP6670AL , FDP7030BL , FDP7030L , FDP7045L , FDP8030L , FDR4410 .
History: FDR856P | NCE50N1K8K
Keywords - FDP6035AL MOSFET datasheet
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History: FDR856P | NCE50N1K8K



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